A team of Anglo-German researchers have produced an optical memory IC.
“We have demonstrated a robust, non-volatile, all-photonic memory based on phase-change materials,” say the researchers, “by using optical near-field effects, we realize bit storage of up to eight levels in a single device that readily switches between intermediate states.”
The chip’s memory cells feature single-shot readout and switching energies as low as 13.4 pJ at speeds approaching 1 GHz. Individual memory elements can be addressed using a wavelength multiplexing scheme.
“Our multi-level, multi-bit devices provide a pathway towards eliminating the von Neumann bottleneck and portend a new paradigm in all-photonic memory and non-conventional computing,” say the team.
from News http://ift.tt/1Ge6xtJ
via Yuichun
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