III-V and CMOS on one die at German conference

Heterogeneous integration of RF GaN and CMOS – both Si and SiGe – will be discussed in a keynote address at the CS International compound semiconductor conference in Frankfurt in March.

Daniel Green of US government research lab DARPA is making the presentation, which will present findings from three research programmes: ‘DAHI’ which is developing technologies for heterogeneous integration of GaN and InP devices with deep submicron silicon CMOS for RF and mixed signal circuits, ‘NEXT’ which has achieved world-record cut-off frequency-breakdown voltage product in GaN, and ‘MPC’ covering wideband GaN power amplifiers using envelope-tracking for increased power-added efficiency.

The argument is that, however much improvement has been achieved in Si and SiGe RF and mixed signal technology using very small transistors, compound semiconductors still possess fundamental advantages.

DARPA’s aim is to use compound semiconductor-CMOS integration to improve linearity, power efficiency, size, weight, and overall system performance.

There are five keynotes

• Opportunities for laser diodes in solid-state lighting – Jon Wierer, Sandia National Labs


• The path to intelligent integration – Jim Cable, Peregrine Semi


• Heterogeneous integration of III-V’s and CMOS – Daniel Green, DARPA


• Ditching the package to drive down GaN transistor costs – Alex Lidow, Efficient Power Conversion


• GaN for radar applications – Takahisa Kawai, Sumitomo Electric Device Innovations

steve bush

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via Yuichun