Rohm plans to mass produce hybrid IGBTs with integrated SiC Schottky barrier diode

ROHM intends to move into mass production of its hybrid IGBTs with integrated 650V SiC Schottky barrier diode in December. The RGWxx65C series (RGW60TS65CHR, RGW80TS65CHR, RGW00TS65CHR devices are qualified under the AEC-Q101 automotive reliability standard. They are suitable for automotive and industrial applications that handle large power, such as photovoltaic power conditioners, onboard chargers, and ...

This story continues at Rohm plans to mass produce hybrid IGBTs with integrated SiC Schottky barrier diode

Or just read more coverage at Electronics Weekly

from News – Electronics Weekly https://ift.tt/3exon55
via Yuichun