Microchip has added 1,700V mosfets to its silicon carbide portfolio, as die, discretes and in modules. Features include gate oxide stability, according to the company, which “observed no shift in threshold voltage even after 100,000 pulses in repetitive un-clamped inductive switching [R-UIS] tests. R-UIS tests also indicated avalanche ruggedness and stability in other parameters. They also ...
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