Imec has demonstrated for the first time fully functional integrated forksheet FETs, with short-channel control (SSSAT=66-68mV/dec) comparable to GAA nanosheet devices down to 22nm gate length. Dual work function metal gates are integrated at 17nm spacing between n- and pFETs, highlighting the key benefit of forksheet devices for advanced CMOS area scaling. The forksheet device ...
This story continues at Imec demoes integrated forksheet FETs for 2nm processes
Or just read more coverage at Electronics Weekly
from News – Electronics Weekly https://ift.tt/2SIVSd3
via Yuichun
沒有留言:
張貼留言