Transphorm, the GaN specialist, is sampling a new slate of parts which it calls its 4th generation or SuperGaN. The first JEDEC-qualified SuperGaN device will be the TP65H300G4LSG, a 240 mΩ 650 V GaN FET in a PQFN88 package. The second SuperGaN device is the TP65H035G4WS, a 35 mΩ 650 V GaN FET in a ...
This story continues at SuperGaN sampling
Or just read more coverage at Electronics Weekly
from News – Electronics Weekly https://ift.tt/2VvxPfe
via Yuichun
沒有留言:
張貼留言