2019年6月5日 星期三

IMS: GaN-on-SiC HEMT beats (most) magnetrons for efficiency

NXP claimed to have a transistor that “exceeds the efficiency of most magnetrons at 2.45GHz” at the International Microwave Symposium in Boston US. “For more than 50 years, 2.45GHz magnetrons have been widely used in consumer and industrial applications ranging from microwave ovens to high power welding machines,” said the firm. “Solid-state solutions appeared on ...

This story continues at IMS: GaN-on-SiC HEMT beats (most) magnetrons for efficiency

Or just read more coverage at Electronics Weekly



from News – Electronics Weekly http://bit.ly/2Zb57QL
via Yuichun

沒有留言:

張貼留言