Gate driver for 1.7-4.5kV IGBTs and SiC transistors

Power Integrations created an isolated gate drive system for up to four paralleled 1.7-4.5kV power modules – either IGBT or silicon carbide mosfet. Called Scale-iFlex, it is dual channel so, for example, independent control of high and low-side switches in a half-bridge is possible. “The system is optimised for the latest 1,700V to 3,300V rated ...

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