Leti strains FD_SOI for more speed and less power
French semiconductor lab CEA-Leti has developed two techniques to induce local strain in FD-SOI (fully-depleted silicon on insulator) for circuits that will produce more speed at the same, or lower, power consumption, and improve performance, it claims. There is compressive SiGe for p-FETs and tensile Si for n-FETs. “In addition to clearing the path to improved ...
from ElectronicsWeekly » News http://ift.tt/1lrxyXk
via Yuichun
沒有留言:
張貼留言