Flat Tunneling Transistor Operates at 0.1V

A transistor designed with a molybdenum disulphide single atomic layer as its channel has been shown to switch at voltages down to 0.1 volt with the prospect of reducing power dissipation by 90 percent compared with state-of-the-art silicon transistors.

from EETimes: http://ift.tt/1M1kIUj
via Yuichun