SiC mosfets switch 60A at 225 deg C

Cissoid has used silicon carbide (SiC) mosfets in a power module which can operate reliably between -55°C and +225°C, delivering up to 60A.

With dual mosfets the module, called CHT-Pluto, is designed for for half-bridges with 30A continuous capability for both low-side and high-side.

The two independent switches can be used in parallel to deliver a total of 60A with a breakdown voltage in excess of 1,200V and a low on-resistance of 23mΩ at 25°C and 50mΩ at 225°C at V_GS=20V.

Integrated Schottky diodes have a low forward voltage that reduces the power dissipation during dead times. Each switch can be controlled with a standard -5/+20V gate voltage.

CHT-PLUTO is available in a hermetically sealed 8 pins proprietary “HM8A” metal package with dimensions of 18mm x 29mm excluding mounting tabs. The devices are electrically isolated from the case of the package.

The module features a low junction-to-case thermal resistance of 0.7°C/W for each 30A channel. Two additional sources connectors allow for an easy and robust connection to the gate driver.

Pierre Delatte, CTO at Cissoid, said:

“CHT-PLUTO is the second product in our offering for power switches at high temperature / high voltage. After CHT-NEPTUNE, our 10A/1200V single switch introduced in 2013, CHT-PLUTO brings a half bridge module with higher current rating and still supporting the extreme environments from -55°C to +225°C.”

CHT-PLUTO datasheet is available.

Richard Wilson

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