Japan’s Eidec makes EUV resist that could speed EUV production 10x

A highly sensitive resist which could speed up EUV production by 10x has been developed by Japan’s EUVL Infrastructure Development Centre (Eidec).

This metal oxide-based material is highly sensitive to EUV light with a wavelength of 13.5nm. Because it absorbs EUV radiation more easily than ordinary resists made from organic compounds, the new material will reduce lithographic exposure time and allow chips to be produced 10 times faster than with conventional EUV technology.

With current resists EUV can do 50 wafers an hour, Eidec’s resist could increase that to 500 an hour in conjunction with a powerful enough light source. ASML and Cymer hsve now got thst up tp 80W.

Without EUV, 10nm will require triple or quadruple patterning faking it to the point where it is too expensive to be worth doing commercially.

Process technology leaders Intel, TSMC and Samsung have all said they’ll be producing on 10nm next year, but none of them say how they’ll be doing it.

Intel recently ordered 15 EUV machines from ASML.

david manners

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via Yuichun