The 650W peak power GaN on SiC HEMT power transistor is for L-Band pulsed radar applications working over 1.2GHz-1.4GHz.
The MAGX-001214-650L0 is a gold-metallised pre-matched transistor which guarantees 650W of peak power with a typical 19.5 dB of gain and 60% efficiency.
Breakdown voltage allows reliable and stable operation at 50V under load mismatch conditions.
“The device is an ideal candidate for customers looking to combine two power transistors and realise over 1,000W of peak power in a single pallet for L-Band radar systems in smaller footprints,” said product manager Paul Beasly.
The device is assembled in a ceramic flange package.
from News http://ift.tt/1sfmTvL
via Yuichun
沒有留言:
張貼留言