Rohm has introduced a nanosecond gate driver for GaN power transistors, aimed at lidar, dc-dc converters and Class-D audio. “It is ideal for high-speed GaN switching, with a minimum gate ...
The post 1.25ns gate driver for GaN hemts appeared first on Electronics Weekly.
from News | Electronics Weekly https://ift.tt/AbMO8lN
via Yuichun
沒有留言:
張貼留言