Ideal Power is aiming to compete with smart IGBT modules with a 1.2kV 160A (100°C, 240A at 25°C) power module built around its novel ‘B-Tran’ bi-direction semiconductor switch. Called IPA01216DFx-HS, ...
The post 200A 1.2kV module built around novel semiconductor appeared first on Electronics Weekly.
from News | Electronics Weekly https://ift.tt/MVL5hNA
via Yuichun
沒有留言:
張貼留言