Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, according to the company a new Schottky metal has been employed, and the junction barrier structure has been changed to lower the electric field compared with the 2nd generation to reduce leakage. ...
The post 650V SiC Schottky diode drops 1.2V appeared first on Electronics Weekly.
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