Infineon Technologies has integrated 600V GaN HD-GIT (hybrid-drain-embedded gate injection transistor) manufacturing into its production line. “The portfolio of discrete and integrated power stage devices provides designers with the necessary flexibility to meet their specific needs for industrial applications complying with JEDEC standards JESD47 and JESD22,” said the company. Available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81- ...
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