Cambridge GaN Devices (CGD) has had its ICeGaN technology endorsed in a paper by Virginia Tech as more reliable and robust than other GaN platforms. The paper called A GaN HEMT with Exceptional Gate Over-Voltage Robustness says ICeGaN shows an exceptionally high over-voltage margin of over 70 V, which is comparable to state-of-the-art traditional silicon devices, and ...
The post Virginia Tech endorses CQD ICeGaN technology appeared first on Electronics Weekly.
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