X-Fab adds 375V nmos and pmos super-junction transistors to BCD chip process

X-Fab Silicon Foundries has added 375V power transistors to the devices available from its 180nm deep trench isolation BCD-on-SoI platform chip fab. The second generation of its XT018 super-junction high-voltage primitive devices, they cover 45 to 375V in one process module and are aimed at applications like medical ultrasound transmitter-receiver ICs and AC line-powered IoT sensors. ...

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