Imec has demonstrated the capability of directed self-assembly (DSA) to pattern line/spaces with a pitch as small as 18nm, using a high-chi block copolymer (high-χ BCP) based process under high volume manufacturing (HVM) conditions. An optimized dry-etch chemistry was used to successfully transfer the pattern into an underlying thick SiN layer – which will enable further ...
This story continues at DSA patterns line pitches down to 18nm
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