Yangtze Memory plans to double its output of NAND wafers to 100k per month this year, reports the Nikkei. Samsung runs about 480k wpm and Micron about 180k. Yangtze currently makes 64 and 128 layer memories but intends to launch 192 layer devices this year which would put it on a par with the most ...
This story continues at Yangtze aims at 100k wpm this year
Or just read more coverage at Electronics Weekly
from News – Electronics Weekly https://ift.tt/3skCCiW
via Yuichun
沒有留言:
張貼留言