IGZO-based DRAM cell reduces refresh rate and power consumption

Imec has come up with a novel DRAM cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors (IGZO-TFTs) and no storage capacitor. DRAM cells in this 2T0C (2 transistor 0 capacitor) configuration show a retention time longer than 400s for different cell dimensions – significantly reducing the memory’s refresh rate and power consumption. The ability to ...

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