Passivation pushes gallium oxide transistor to over 8kV

Organic surface passivation has allowed a gallium oxide transistor to hold-off 8.03kV – the highest reported for a lateral mosfet, according to the University of Buffalo engineering team behind the device. The proof-of-concept device was passivated with the high field strength epoxy polymer SU-8. Without passivation, a similar transistor scored 2.7kV. This un-passivated voltage is ...

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