Masaharu Kobayashi of Tokyo University has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. Nearly ideal subthreshold swing (SS) and mobility higher than poly-silicon channel have been demonstrated. FeFET is a promising memory device because of its low-power, high-speed and high-capacity. After the discovery of CMOS-compatible ferroelectric-HfO2 material, FeFET has been attracting ...
This story continues at ‘Ideal’ FeFET made with ferroelectric-HfO2 and ultrathin IGZO channel
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