2019年7月1日 星期一

‘Ideal’ FeFET made with ferroelectric-HfO2 and ultrathin IGZO channel

Masaharu Kobayashi of Tokyo University has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. Nearly ideal subthreshold swing (SS) and mobility higher than poly-silicon channel have been demonstrated. FeFET is a promising memory device because of its low-power, high-speed and high-capacity. After the discovery of CMOS-compatible ferroelectric-HfO2 material, FeFET has been attracting ...

This story continues at ‘Ideal’ FeFET made with ferroelectric-HfO2 and ultrathin IGZO channel

Or just read more coverage at Electronics Weekly



from News – Electronics Weekly https://ift.tt/2xqAafU
via Yuichun

沒有留言:

張貼留言