Samsung has started the ramp of 90-layer 256Gb 3D TLC NAND with the ‘Toggle DDR 4.0’ interface which transfers data between storage and memory at 1.4Gbps which is a 40% increase from its 64-layer predecessor. The energy efficiency of Samsung’s new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage ...
This story continues at Samsung ramping 90-layer 256Gb TLC NAND with Toggle DDR 4.0 interface
Or just read more coverage at Electronics Weekly
from News – Electronics Weekly https://ift.tt/2u5bPLo
via Yuichun
沒有留言:
張貼留言