Wolfspeed 28V GaN HEMT power devices capable of 8GHz

Wolfspeed has introduced 28V GaN HEMT RF power devices  capable of higher frequency operation to 8GHz. The 28V GaN HEMT devices are made on Wolfspeed’s 0.25µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4µm devices, making it possible for RF design engineers to use them as drop-in ...

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