NXP Semiconductors has developed a power transistor for 915MHz applications which is its highest power device in this frequency class. The 50V silicon LDMOS power transistor has been designed to deliver 750W continuous wave (CW). It is intended to move microwave generator design out of the vacuum tube-era where technologies such as magnetrons are the ...
Read full article: NXP moves solid-state RF energy design to new level
from News – Electronics Weekly http://ift.tt/2sSjhu9
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