Renesas is claiming record low stand-by power for embedded SRAM, at 13.7nW/Mbit. Speed has been retained – active read-out takes 1.8ns. The firm used its in-house 65nm silicon-on-thin buried oxide (BOX) – SOTB – process for the prototype, and used substrate biasing to adjust the leakage/speed compromise. This gets over challenges with conventional CMOS, such ...
Read full article: Embedded SRAM power record claimed
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