4DS Memory, the Australian ReRAM specialist, says it has improved its ReRAM through architectural changes which now make its read times comparable to DRAM. 4DS calls its memory Interface Switching ReRAM and claims it needs minimal error correction. That delivers the faster read speed. 4DS has scaled its technology to 40nm and is now focussed ...
Read full article: 4DS makes ReRAM as fast as DRAM
from News – Electronics Weekly http://ift.tt/2tRdSQi
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