Japanese gallium oxide power device start-up Flosfia has raised Y750m (£5m) in series B funding. http://flosfia.com The firm, a spin-out from the Kyoto University, is aiming to commercialise crystalline α-Ga2O3 (corundum/sapphire/ruby structure) in power transistors and Schottky diodes – with the intention of manufacturing 600V TO-220 diodes in 2018 to compete against silicon carbide power ...
Read full article: Gallium oxide power device firm gets £5m in second-round funding
from News – Electronics Weekly http://ift.tt/2ncO4xA
via Yuichun
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