2016年8月2日 星期二

Field Data Proves GaN FET Reliability, Says EPC

Gallium nitride power FET maker Efficient Power Conversion (EPC) has published its reliability report documenting GaN technology reliability after millions of device hours of stress testing, and based on analysis of all field returns.

from EETimes: http://ift.tt/2aL1yvm
via Yuichun

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