2016年4月19日 星期二

Russian scientists claim breakthrough in ferroelectric universal memory

Scientists from the Moscow Institute of Physics and Technology (MIPT) have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. As demand for data storage increases researchers are trying to develop faster and more compact storage devices. The ideal ...

Russian scientists claim breakthrough in ferroelectric ‘universal’ memory



from ElectronicsWeekly » News http://ift.tt/20TiW1A
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