A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. ‘We can form a single device that can perform the functions of all three devices,” says researcher Ji Ung Lee. The device is made of 2-D tungsten diselenide (WSe2), ...
Read full article: SUN-Poly makes device that can be a pin diode, a MosFET or a BJT.
from News – Electronics Weekly http://ift.tt/2sFT1CJ
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